ISSN: 2997-6200
Authors: Poobalan B* and Manikandan N
The distinct characteristics of silicon carbide (SiC) power semiconductor devices allow for significant advancements over conventional power conversion methods. SiC power semiconductor devices provide reduced switching and conduction losses, increasing the efficiency of the converter. By using this material, it is anticipated to lower the weight and cost of the conversion system due to its fast-switching speed. These developments will allow solar energy to become more affordable than conventional sources of power. This wide-band-gap transistor developments are expected to drive the rapid development of renewable energy generation systems. Hence, this article discusses the benefits of SiC power semiconductor devices, their application, challenges, and future prospects in diverse fields, including renewable energy.
Keywords: Silicon Carbide; Renewable Energy Systems; Sic Technology; Voltage Spikes; Electric Vehicles
