The Emerging Silicon Carbide MOSFET for Medical Healthcare Applications

Authors: Natarajan M and Poobalan B*

DOI: 10.23880/nnoa-16000342

Volume 10, Issue 1

Abstract

Silicon carbide (SiC) MOSFETs are transforming the design and functionality of medical devices by providing exceptional efficiency, reliability, and compactness. Despite standard silicon-based power devices, SiC MOSFETs offer enhanced electrical and thermal properties including higher breakdown voltage, lower switching losses, and improved thermal conductivity. In healthcare applications, whereby accuracy, energy efficiency, and reliability of operations are critical, these characteristics are extremely significant SiC MOSFETs give improved power densities and increased switching speeds in medical imaging systems such as CT and MRI scanners, hence improving image quality and reducing system size. The excellent efficiency of wearable and portable medical devices helps to downsize and extends battery lifetime. Furthermore, ensuring dependability in critical care settings, SiC MOSFETs increase the efficiency of instruments for surgery, diagnostic instruments, and lifesupport systems. The importance of SiC MOSFETs in improving healthcare technology is addressed in this article along with their main features relating healthcare, applications in the field, and their benefits to the healthcare system. SiC MOSFETs have the potential to become an essential element of advanced medical electronics as the healthcare industry progressively incorporates sophisticated and energy-intensive technologies, therefore enabling developments in both clinical and portable care solutions.

Keywords: Silicon Carbide; Medical Healthcare Applications; Semiconductors

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