Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

Authors: Najafov BA, Isakov QI and Abasov FP*

DOI: 10.23880/psbj-16000111

Volume 2, Issue 1

Abstract

Infrared (IR) absorption spectra are investigated hydrogenated amorphous solid solution films a-Si1-xGex: H (x = 0 ÷ 1) plasma chemical vapor deposition at different partial pressures of hydrogen PH2. Defined force, oscillator, which essentially depend on PH2. It is shown that the hydrogen contained in films mostly in the forms of GeH, SiH. Using integrated acquisitions JW, determined the amount of hydrogen in the films. Film properties depend on the composition and level of hydrogenation. The number of hydrogen atoms in films, varied by changing the composition of the gas mixture. In the work measured IR absorption for films a-Si1-xGex: H, a-Ge: H and a-Si0,88Ge0, 12: h. based on films and a-Si: H and a-Si0,88 Ge0, 12: H fabricated three-layer solar cells with an area of item 1.3 cm2 and efficiency equal to ~ 9.5%.

Keywords: Oscillator; Absorption coefficient; Effusion of hydrogen; Deposition rate

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