ISSN: 2641-9165
Authors: Qasanov RA*, Najafov BA, Ibrahimov RS and Abasov FP
In this work it is presented a methodology, based on optical properties, to determine the hydrogen concentration contained in films of a-Si: H and a-Ge: H. Moreover, it is shown that the film properties depend heavily on the composition and level of hydrogenation. The number of hydrogen atoms in the films were varied by changing trains and gas mixture measured infrared absorption for films of a-Si: H and a-Ge: H also defined width of forbidden zone E0 for these films. In the work of the IR absorption spectra are investigated alloy films and nk-Si: H (a-amorphous, nk-Nano crystalline) in the energy range 0.03 - 3.0 eV. Defined optical absorption coefficients (α) films for weakly and strongly absorbing spectra, as well as the coefficients of refraction (n) and weakening factors (active) for a variety of transparent and non-transparent substrates.
Keywords: Amorphous films; Nano crystalline films; Optical constants; Absorption; Reflection
