Kinetic Monte Carlo Study of Low Pressure Chemical Vapor Deposition SiNx Thin Films Deposit Phase

Authors: Bouhadiche A* and Benghorieb S

DOI: 10.23880/nnoa-16000210

Volume 6, Issue 2

Abstract

In the present study, we use a simulation program based on the kinetic Monte Carlo method able to describe the deposition process of nitrogen doped silicon films obtained by low-pressure chemical vapor deposition technique with a mixture of disilane and ammonia. A new pattern describing the ammonia molecules distribution in the simulation matrix allowed us via the kinetic Monte Carlo method to simulate the deposit phase of layers. The obtained results describe well the different stages of the nitrogen doped silicon deposition process. Indeed, an increase in the gas flow ratio leads to the formation of a high density of small amorphous silicon clusters. 

Keywords: Kinetic Monte Carlo; Amorphous Silicon Cluster; Cluster Density

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