Nanomedicine & Nanotechnology Open Access (NNOA)

ISSN: 2574-187X

Research Article

Certain Amount of Hydrogenthin Films Well-Si1-Xgex : H (X = 0 ÷ 1) for Electronic Devices

Authors: Abasov FP* and Najafov BA

DOI: 10.23880/nnoa-16000222

Abstract

The possibilities of application of the technology of plasma-chemical deposition of films as well-Si1-xGex : H (x = 0 ÷ 1), undoped and doped with PH3 and B2H6, for use in the p-i-n- structures of solar cells. The optical properties, in the same defined amount of hydrogen contained in the film. It was found that the film properties greatly depend on the composition and the level of hydrogenation. The amount of hydrogen atoms in the films was varied by changing the gas mixture composition and IR absorption were measured for the films a-Si: H and a-Ge: H. Films based on a-Si: H and a-Si0,88Ge1,2: H solar cells are made from three layers of 1.3 cm2 area and cell efficiency ( ξ ) of 9.5%.

Keywords: Thin Film Amorphous Silicon Solar Cells; The Efficiency of the Optical Properties

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